1.    Akira Isobe, Toshiyuki Yokoyama, Takashi Komiyama, and Syuhei Kurokawa: “Mechanisms of Local Planarization Improvement using Solo Pad in Chemical Mechanical Polishing”, Jpn. J. Apply. Phys. 52 (2013) 126501

2.    Akira Isobe, Takashi Komiyama, and Syuhei Kurokawa: “New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing”, Jpn. J. Appl. Phys. 52 (2013) 126502

3.    Akira Isobe, Masatoshi Akaji, Shuhei Kurokawa:”Proposal of New Polishing Mechanism Based on Feret’s Diameter of Contact Area between Polishing Pad and Wafer”, Jpn. J. Appl. Phys. 52 (2013) 126503

4.    Akira Isobe, Kenjiro Ogata, and Shuhei Kurokawa : “Macromodel for Changes in Polishing Pad Surface Condition Caused by Dressing and Polishing”, Jpn. J. Appl. Phys. 53(2014)016501

5.  H. Nishizawa, H. Nojo, and Akira Isobe : “Fundamental study on Chemical-Mechanical polishing slurry ofcobalt barrier metal for the next generation interconnect process”, Jpn. J. Appl. Phys. 49(2010)05FC03-1

6. Akira Isobe, Masahide Shinohara : "Application of photosensitive polyimide: Mask saving process for buffer coating", J. Photopolymer Sci. Tech. 9(1996)

7. Akira Isobe : "A new model for passivation effects on slectromigration", NEC Research and Development 32(1991)187

8. Akira Isobe, Masahide Shinohara, Mitsumasa Hiraki and Akira Hoshino :"Via hole failure study", NEC Research and Development 34(1993)77

1.    Akira Isobe：”Planarization – From the viewpoint of fine patterning and reliability”, SEMI Technical Symp. 1991, p.276

2.    Soshi Yamada and Akira Isobe : “Leading Edge CMP Head Development for Excellent Polishing Planarity & Uniformity Using Solo Pad”, Proc. 19^th VMIC, 2002, 9F

3.    Takashi Fujita, Toshiro Doy, Akira Isobe, and Osamu Kinoshita : “Study of Electro-CMP for Copper Damascene Process”, Proc. 19^th VMIC, 2002, p. 158

4.    Akira Isobe : “CMP hardware trends for future ULSI devices”, presented at VMIC, 2002 (Invited)

5.    Akira Isobe, Akihiko Yamane, Katsunori Tanaka, Soshi Yamada, and Minoru Numoto : “A Novel Air Floating Head for Next Generation CMP”, Proc. CMPMIC, 2003, p. 509

6.    Osamu Matsushita, Akihiko Yamane, and Akira Isobe : “Novel EDP Using White Light for ILD Application”, Proc. CMPMIC, 2003, 8F

7.    Takashi Fukui, Katsunori Tanaka, Minoru Numoto, Akihiko Yamane, and Akira Isobe : “A Study toward Edge Exclusion 1 mm ; Substrate Shape and Polishing Profile Correlation”, Proc. 20^th VMIC, 2003, 3K

8.    Akihisa Ueno, Toshiyuki Yokoyama, Akihiko Yamane, Soshi Yamada, Tsutomu Yamazaki, and Akira Isobe : “Ability of Preventing Delamination for Low-k Film with Air Float Concept (AFC) CMP Head in Copper CMP”, Proc. 20^th VMIC, 2003, 3H

9.    T. Yokoyama, T. Komiyama, T. Fukui, T. Yamazaki, A. Yamane, and A. Isobe : “Improvement of Copper CMP Performance by Controling Pad Temperature Using Solo Pad”, Proc. 1^st PACRIM CMP, 2004, P. 5

10. Osamu Kinoshita, Tsutomu Yamazaki, Yomoyuki Fukuda, and Akira Isobe : “Defect Improvement in CMP Process by Using Lower Retainer Ring Pessure”, Proc. 1^st PACRIM CMP, 2004, p. 240

11. T. Yokoyama, T. Komiyama, T. Fukui, T. Yamazaki, A. Yamane, and A. Isobe : Improvement of Copper CMP Performance by Controlling Pad Temperature Using Solo Pad”, Proc. CMPMIC, 2003

12. Akira Isobe : “Unique Air Floating Concept Head “Sylphide” for Next Generation CMP”, presented at IC-China Seminor at Shanhai in 2004

13. Akira Isobe : “CMP Productivity Improvement with ChaMP”, presented at IC-China Seminor at Shanhai in 2005

14. Rika Tanaka, Haruki Nojo, Koichi Yoshida, and Akira Isobe : “Advanced W-CMP slurry for high planarity”, Proc. 4^th Int. Conf. Planarization/CMP Technol.(ICPT) 2007, p. 315

15. Akira Isobe and Jae Hong Park : “Study of pad surface treatment for the improvement of process performance and productivity”, presented at 12^th International symposium on Chemical Mechanical Planarization(CAMP), 2007

16. Hiroshi Nitta, Akira Isobe, Jae Hong Park and Takashi Hirao : “”Chemical Enhanced Planarization” (CEP) Slurry for Thick Copper Process”, Proc. 5^th Int. Conf. Planarization/CMP Technol.(ICPT), 2008, p. 125

17. Masatoshi Akaji, Shinichi Haba, Kouichi Yoshida, Akira Isobe, and Masaharu Kinoshita : “Study of optimum polishing pad surface for CMP”, Proc. 6^th Int. Conf. Planarization/CMP Technol.(ICPT), 2009, p. 97

18. Yoshiyuki Matsumura and Akira Isobe : “Ultra-high-Removal-Rate Cu-Slurry Technology for 3D-IC TSV”, Proc. 6^th Int. Conf. Planarization/CMP Technol.(ICPT), 2009, p. 125

19. H. Nishizawa, H. Nojo, and Akira Isobe : “Fundamental study on CMP slurry of cobalt barrier metal for next generation process”, Proc. Advanced Metallization Conf.(ADMETA) 19^th Asian session, 2009, p. 76

20. H. Nishizawa, J. H. park, and A. Isobe : “One step polishing slurry for Cu-TSV process”, Proc. 7^th Int. Conf. Planarization/CMP Technol.(ICPT), 2010, p. 325

21. Kenjiro Ogata, Hiroyuki Seno, Akira Isobe, and Koichi Yoshid : “A Novel Evaluation Method for pad Conditioners”, Proc. 8^th Int. Conf. Planarization/CMP Technol.(ICPT), 2011, p. 360

22.  Akira Isobe, Hideyuki Nishizawa, Shinichi Haba, and Shuhei Kurokawa: “Numerical discussion ofpolishing mechanism considering contact area of polishing pad and that of polishing abrasives”, Proc. ICPT2011, p. 252

23. Akira Isobe : "Increase of EM resistance by planarizing passivation film over Al wiring", Proc. 6th VMIC, 1989

24. Akira Isobe : "Dielectric film influence on stress migration", Proc. 7thVMIC, 1990

25. Akira Isobe : "PA new model for electromigration of passivated wirings", Proc. ESREF91(European Symposium on reliablity of Electric device and failure analysis)

26. Akira Isobe, M.Hiraki, M.Shinohara : "A study on via hole failure mechanism using UHRAEM", Proc. 9th VMIC, 1992, p.352

27. Akira Isobe, "A Polishing Mechanism which explains Wafer Pressure Dependency of Removal Rate, Wafer Roughness and Scratch Number", Proc. 13^th Int. Conf. Planarization/CMP Technol.(ICPT), 2016, p. 21 A Polishing Model which Explains Wafer Pressure Dependency of Removal Rate, Surface Roughness and Scratch Number "

1.    三 橋真成、小野秀之、礒部晶：CMPに よる平坦化研磨－パッドとウエハ の接触状態－、精密工学会秋期大会学術講演会講演論文集　1995年 　p. 409

2.    三 橋真成、小野秀之、礒部晶、山森篤：CMPに よる平坦化研磨－パッド真実接触 面積と研磨レート－、精密工学会春季大会学術講演会講演論文集1996年p. 927

3.    赤 時正敏、森崎貞和、木下正治、繁田好胤、礒部晶、吉田光一、朴栽弘、柏原洋史、河井奈緒子、宮本一隆、田中佑典、淡井良平：研磨パッ ドのブレークインフリーを目指した表面加工とその評価結果、精密工学会春季大会学術講演会講演論文集　2009年 　p. 1037

4.    尾 形謙次郎、妹尾浩行、吉田公一、礒部晶：研磨性能に影響を及ぼすパッド表面指標の研究、精密工学会秋期大会学術講演会講演論文集、2010年、p. 143

5.    山 本恵司、羽場真一、礒部晶：ナップパッドの研磨レート低下メカニズムに関する研究、精密工学会大会学術講演会講演論文集、2010年、p.731

6.    礒 部晶、西澤秀明、羽場真一：研磨パッドおよび砥粒のコンタクトエリアを考慮した研磨メカニズムの数量的考察、精密工学会春期大会学術 講演会講演論文集、2011年、p. 347

7.    電 子ジャーナルElectronic Journal別 冊　2002半 導体テクノロジー大全：第4編 半導体製造技術　第13章CMP　 第1節CMP技 術総論、第3節 層間絶縁膜CMP技 術と装置・材料

8.    電 子ジャーナルElectronic Journal別 冊　2004半 導体テクノロジー大全：第4編 半導体製造技術　第13章CMP　 第1節CMP技 術総論、第3節 層間絶縁膜CMP技 術と装置・材料

9.    礒 部晶：LSIデ バイスの進展とそれを支えるCMP装 置、月刊トライボロジー　16 (2002) 184（解 説記事）

10. 礒 部晶：CMPに おけるe-manufacturing、SEAJ Forum 2004

11. 礒 部晶：CMPの 「継続的改善」に求められる研磨パッド材特性、Material Stage 6 (2006) 69　(解 説記事)

12. 礒 部晶：CMPの 基礎と実際、砥粒加工学会　第17回 グラインディングアカデミーテキスト、2009年、p. 40

13. 礒 部晶：要素技術を統合する次世代CMP装 置開発、砥粒加工学会誌 50 (2006) 448　(解 説記事)

14. 礒 部晶：平面精密研磨に用いられる研磨パッドの技術動向　精密工学会誌　78 (2012) 937　(解 説記事)